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Introducing the IRF520 - a high-performance MOSFET transistor designed for various electronic applications. With its robust construction and exceptional electrical characteristics, the IRF520 is a reliable choice for amplification, switching, and motor control circuits. This N-Channel MOSFET transistor operates at a voltage range of 100V and offers a continuous drain current of 9.2A, making it suitable for a wide range of power applications.
The IRF520 transistor features a low on-resistance of only 0.27 ohms, ensuring efficient power transfer and minimal voltage drop during operation. Its fast switching speed and excellent thermal stability contribute to its overall performance and reliability. With a TO-220 package, it is easy to mount and integrate into various electronic projects. Whether you're a hobbyist, student, or professional, the IRF520 is a versatile component that can handle high-power requirements with ease.
Upgrade your electronic projects with the IRF520 MOSFET transistor and experience enhanced performance and control. From audio amplifiers to motor drivers, this transistor offers efficient power management and reliable switching capabilities. Unlock the potential of your circuits with the IRF520 and enjoy the benefits of its high voltage tolerance, low on-resistance, and impressive current-handling capabilities. Take your electronic designs to the next level with the versatile and dependable IRF520 transistor.
Specification of IRF520N Power MOSFET:
- Transistor Type: N-Channel
- Maximum Voltage Rating: 100V
- Continuous Drain Current: 9.2A
- Maximum Power Dissipation: 48W
- On-Resistance: 0.27 ohms
- Gate-Source Voltage (VGS) Threshold: 2V - 4V
- Gate-Source Voltage (VGS) Maximum: ±20V
- Drain-Source Breakdown Voltage (BVDSS): 100V
- Input Capacitance (Ciss): 1400pF
- Output Capacitance (Coss): 300pF
- Switching Time (Turn-On Delay Time + Rise Time): 35ns
- Switching Time (Turn-Off Delay Time + Fall Time): 150ns
- Operating Temperature Range: -55°C to 175°C
- Mounting Style: Through-hole
